(China (Mainland))
Product Summary
The IRFP250N utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package of IRFP250N is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.
Parametrics
IRFP250N absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V, ID @ TC = 25℃: 30A; (2)Continuous Drain Current, VGS @ 10V, ID @ TC = 100℃: 21A; (3)Pulsed Drain Current, IDM: 120A; (4)Power Dissipation, PD @TC = 25℃: 214W; (5)Linear Derating Factor: 1.4 W/℃; (6)Gate-to-Source Voltage, VGS: ±20V; (7)Single Pulse Avalanche Energy, EAS: 315mJ; (8)Avalanche Current, IAR: 30A; (9)Repetitive Avalanche Energy, EAR: 21mJ; (10)Peak Diode Recovery dv/dt, dv/dt: 8.6V/ns.
Features
IRFP250N features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated; (6)Ease of Paralleling; (7)Simple Drive Requirements.
Diagrams
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 IRFP250N |
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Data Sheet |
Negotiable |
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IRFP250NPBF |
International Rectifier |
MOSFET MOSFT 200V 30A 75mOhm 82nCAC |
Data Sheet |
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