Product Summary

1. Advanced Process Technology
2.Ultra Low On-Resistance
3. Dynamic dv/dt Rating
4.175°C Operating Temperature
5. Fast Switching
6. Fully Avalanche Rated

Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.

 

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF530N
IRF530N
International Rectifier
MOSFET N-CH 100V 17A TO-220AB
Data Sheet
1-400: $0.65
IRF530N,127
IRF530N,127

MOSFET N-CH 100V 17A TO-220AB
Data Sheet
Negotiable 
IRF530NPBF
IRF530NPBF
International Rectifier
MOSFET MOSFT 100V 17A 90mOhm 24.7nC
Data Sheet
0-1: $1.33
1-25: $0.81
25-100: $0.56
100-250: $0.53
IRF530N_R4942
IRF530N_R4942
Fairchild Semiconductor
MOSFET TO-220AB N-Ch Power
Data Sheet
Negotiable 
IRF530NL
IRF530NL

MOSFET N-CH 100V 17A TO-262
Data Sheet
0-350: $0.68
IRF530NLPbF
IRF530NLPbF
International Rectifier
MOSFET N-CH 100V 17A TO-262
Data Sheet
1-10: $0.68
10-100: $0.49
100-250: $0.46
250-500: $0.44
500-1000: $0.41
1000-2500: $0.39
2500-10000: $0.36
IRF530NSTRLPBF
IRF530NSTRLPBF
International Rectifier
MOSFET MOSFT 100V 17A 90mOhm 24.7nC
Data Sheet
0-1: $1.41
1-25: $0.91
25-100: $0.66
100-250: $0.62
IRF530NSTRRPBF
IRF530NSTRRPBF
International Rectifier
MOSFET
Data Sheet
0-800: $0.50
800-960: $0.50
960-1000: $0.48
1000-2000: $0.45